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Electronic component:Description:Manuf.PackagePinsT°minT°maxDatasheet
MH16S64PHB-101,073,741,824-bit (16,777,216-word by 64-bit) synchronous DRAMMitsubishi-Electric-Corporation-Semiconductor-Group--0°C70°C589 K
MH16S64PHC-101,073,741,824-bit (16,777,216-word by 64-bit) synchronous DRAMMitsubishi-Electric-Corporation-Semiconductor-Group--0°C70°C590 K
MH16S64PHC-71,073,741,824-bit (16,777,216-word by 64-bit) synchronous DRAMMitsubishi-Electric-Corporation-Semiconductor-Group--0°C70°C590 K
MH16S64PHC-81,073,741,824-bit (16,777,216-word by 64-bit) synchronous DRAMMitsubishi-Electric-Corporation-Semiconductor-Group--0°C70°C590 K
MH16S72APHB-61,207,959,552-bit (16,777,216-word by 64-bit) synchronous DRAMMitsubishi-Electric-Corporation-Semiconductor-Group--0°C70°C691 K
MH16S72APHB-71,207,959,552-bit (16,777,216-word by 64-bit) synchronous DRAMMitsubishi-Electric-Corporation-Semiconductor-Group--0°C70°C691 K
MH16S72APHB-71,207,959,552-bit (16,777,216-word by 64-bit) synchronous DRAMMitsubishi-Electric-Corporation-Semiconductor-Group--0°C70°C691 K
MH16S72APHB-81,207,959,552-bit (16,777,216-word by 64-bit) synchronous DRAMMitsubishi-Electric-Corporation-Semiconductor-Group--0°C70°C691 K
MH16S72BAMD-71,207,959,552-bit (16,777,216-word by 64-bit) synchronous DRAMMitsubishi-Electric-Corporation-Semiconductor-Group--0°C70°C592 K
MH16S72BAMD-81,207,959,552-bit (16,777,216-word by 64-bit) synchronous DRAMMitsubishi-Electric-Corporation-Semiconductor-Group--0°C70°C592 K
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