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Electronic component:Description:Manuf.PackagePinsT°minT°maxDatasheet
MH16S72PHB-101,207,959,552-bit (16,777,216-word by 72-bit) synchronous DRAMMitsubishi-Electric-Corporation-Semiconductor-Group--0°C70°C590 K
MH16S72PHB-81,207,959,552-bit (16,777,216-word by 72-bit) synchronous DRAMMitsubishi-Electric-Corporation-Semiconductor-Group--0°C70°C590 K
MH16S72PHC-101,207,959,552-bit (16,777,216-word by 72-bit) synchronous DRAMMitsubishi-Electric-Corporation-Semiconductor-Group--0°C70°C591 K
MH16S72PHC-71,207,959,552-bit (16,777,216-word by 72-bit) synchronous DRAMMitsubishi-Electric-Corporation-Semiconductor-Group--0°C70°C591 K
MH16S72PHC-81,207,959,552-bit (16,777,216-word by 72-bit) synchronous DRAMMitsubishi-Electric-Corporation-Semiconductor-Group--0°C70°C591 K
MH16S72VJB-61,207,959,552-bit (16,777,216-word by 72-bit) synchronous DRAMMitsubishi-Electric-Corporation-Semiconductor-Group--0°C70°C930 K
MH16V6445BWJ-51,073,741,824-bit (16,777,216-word by 64-bit) synchronous DRAMMitsubishi-Electric-Corporation-Semiconductor-Group--0°C70°C127 K
MH16V6445BWJ-61,073,741,824-bit (16,777,216-word by 64-bit) synchronous DRAMMitsubishi-Electric-Corporation-Semiconductor-Group--0°C70°C127 K
MH16V645BWJ-51,073,741,824-bit (16,777,216-word by 64-bit) synchronous DRAMMitsubishi-Electric-Corporation-Semiconductor-Group--0°C70°C127 K
MH16V7245BWJ-51,207,959,552-bit (16,777,216-word by 72-bit) dynamic DRAMMitsubishi-Electric-Corporation-Semiconductor-Group--0°C70°C129 K
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