| Electronic component: | Description: | Manuf. | Package | Pins | T°min | T°max | Datasheet |
|---|
| MH16S64APFC-7 | 1073741824-bit (16777216-word by 64-bit) synchronous DRAM | Mitsubishi-Electric-Corporation-Semiconductor-Group | TSOP | 144 | 0°C | 70°C | 676 K |
| MH16S64APFC-7L | 1073741824-bit (16777216-word by 64-bit) synchronous DRAM | Mitsubishi-Electric-Corporation-Semiconductor-Group | TSOP | 144 | 0°C | 70°C | 676 K |
| MH16S64APFC-8 | 1073741824-bit (16777216-word by 64-bit) synchronous DRAM | Mitsubishi-Electric-Corporation-Semiconductor-Group | TSOP | 144 | 0°C | 70°C | 676 K |
| MH16V7245BATJ-5 | 1,207,959,552-bit (16,777,216-word by 72-bit) dynamic DRAM | Mitsubishi-Electric-Corporation-Semiconductor-Group | - | - | 0°C | 70°C | 152 K |
| MH16V7245BATJ-6 | 1,207,959,552-bit (16,777,216-word by 72-bit) dynamic DRAM | Mitsubishi-Electric-Corporation-Semiconductor-Group | - | - | 0°C | 70°C | 152 K |
| MH16V7245BWJ-6 | 1,207,959,552-bit (16,777,216-word by 72-bit) dynamic DRAM | Mitsubishi-Electric-Corporation-Semiconductor-Group | - | - | 0°C | 70°C | 129 K |
| MH16V725BATJ-5 | 1,207,959,552-bit (16,777,216-word by 72-bit) dynamic DRAM | Mitsubishi-Electric-Corporation-Semiconductor-Group | - | - | 0°C | 70°C | 149 K |
| MH16V725BATJ-6 | 1,207,959,552-bit (16,777,216-word by 72-bit) dynamic DRAM | Mitsubishi-Electric-Corporation-Semiconductor-Group | - | - | 0°C | 70°C | 149 K |
| MH16V725BWJ-5 | 1,207,959,552-bit (16,777,216-word by 72-bit) dynamic DRAM | Mitsubishi-Electric-Corporation-Semiconductor-Group | - | - | 0°C | 70°C | 129 K |
| MH16V725BWJ-6 | 1,207,959,552-bit (16,777,216-word by 72-bit) dynamic DRAM | Mitsubishi-Electric-Corporation-Semiconductor-Group | - | - | 0°C | 70°C | 129 K |
| [1] [2] [3] [4] [5] [6] 7 [8] [9] [10] |
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