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Electronic component:Description:Manuf.PackagePinsT°minT°maxDatasheet
MH8S64QFC-7536870912-bit (8388608-word by 64-bit) synchronous DRAMMitsubishi-Electric-Corporation-Semiconductor-Group-1440°C70°C580 K
MH8S64QFC-7L536870912-bit (8388608-word by 64-bit) synchronous DRAMMitsubishi-Electric-Corporation-Semiconductor-Group-1440°C70°C580 K
MH8S64QFC-8536870912-bit (8388608-word by 64-bit) synchronous DRAMMitsubishi-Electric-Corporation-Semiconductor-Group-1440°C70°C580 K
MH8S64QFC-8L536870912-bit (8388608-word by 64-bit) synchronous DRAMMitsubishi-Electric-Corporation-Semiconductor-Group-1440°C70°C580 K
MH8V6445BWZJ-5536870912-bit (8388608-word by 64-bit) dynamic DRAMMitsubishi-Electric-Corporation-Semiconductor-GroupTSSOP1680°C70°C121 K
MH8V6445BWZJ-6536870912-bit (8388608-word by 64-bit) dynamic DRAMMitsubishi-Electric-Corporation-Semiconductor-GroupTSSOP1680°C70°C121 K
MH8V7245BAZTJ-5603979776-bit (8388608-word by 72-bit) dynamic DRAMMitsubishi-Electric-Corporation-Semiconductor-GroupTSSOP1680°C70°C147 K
MH8V7245BAZTJ-6603979776-bit (8388608-word by 72-bit) dynamic DRAMMitsubishi-Electric-Corporation-Semiconductor-GroupTSSOP1680°C70°C147 K
MH8V725BAZTJ-5603979776-bit (8388608-word by 72-bit) dynamic DRAMMitsubishi-Electric-Corporation-Semiconductor-GroupTSSOP1680°C70°C147 K
MH8V725BAZTJ-6603979776-bit (8388608-word by 72-bit) dynamic DRAMMitsubishi-Electric-Corporation-Semiconductor-GroupTSSOP1680°C70°C147 K
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