| Electronic component: | Description: | Manuf. | Package | Pins | T°min | T°max | Datasheet |
|---|
| ML976H10 | AIGaAs high power laser diode | Mitsubishi-Electric-Corporation-Semiconductor-Group | - | 2 | -40°C | 50°C | 95 K |
| ML976H11F | AIGaAs-MQW-DFB laser diode | Mitsubishi-Electric-Corporation-Semiconductor-Group | - | 2 | -40°C | 85°C | 145 K |
| ML99212 | AIGaAs-MQW-DFB laser diode | Mitsubishi-Electric-Corporation-Semiconductor-Group | - | 2 | -20°C | 30°C | 138 K |
| ML99213 | AIGaAs-MQW-DFB laser diode | Mitsubishi-Electric-Corporation-Semiconductor-Group | - | 2 | -20°C | 30°C | 113 K |
| ML9XX14 | AIGaAs DFB-LD with EA modulator laser diode | Mitsubishi-Electric-Corporation-Semiconductor-Group | - | - | -20°C | 30°C | 87 K |
| ML9XX15 | AIGaAs DFB-LD with EA modulator laser diode | Mitsubishi-Electric-Corporation-Semiconductor-Group | - | - | -20°C | 30°C | 82 K |
| ML9XX17 | AIGaAs MQW-DFB with EA modulator laser diode | Mitsubishi-Electric-Corporation-Semiconductor-Group | - | - | 15°C | 35°C | 6 M |
| ML9XX18 | AIGaAs MQW-DFB with EA modulator laser diode | Mitsubishi-Electric-Corporation-Semiconductor-Group | - | - | 15°C | 35°C | 28 K |
| ML9XX18 | AIGaAs MQW-DFB with EA modulator laser diode | Mitsubishi-Electric-Corporation-Semiconductor-Group | - | - | 15°C | 35°C | 28 K |
| SML9030-220M | 900V Vdss N-Channel FET (field effect transistor) | Semelab-Plc- | TO257AB(TO220M) | - | - | - | 20 K |
| SML9030-T254 | 900V Vdss N-Channel FET (field effect transistor) | Semelab-Plc- | TO254 | - | - | - | 20 K |
| [1] [2] 3 [4] |
|---|
