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Electronic component:Description:Manuf.PackagePinsT°minT°maxDatasheet
MTB1306HDTMOS E-FET high density power FETMotorolaDPAK4-55°C150°C176 K
MTB40N10ETMOS E-FET power field effect transistorMotorolaDPAK4-55°C150°C192 K
MTB4N80E1TMOS E-FET high energy power FET D2PAK for surface mountMotorolaDPAK4-55°C150°C160 K
MTB50N06ELTMOS E-FET power field effect transistor D2PAK for surface mountMotorolaDPAK4-55°C150°C97 K
MTB50P03HDLHDTMOS E-FET high energy power FET D2PAK for surface mountMotorolaDPAK4-55°C150°C182 K
MTB52N06VTMOS V power field effect transistor D2PAK for surface mountMotorolaDPAK4-55°C175°C198 K
MTB52N06VTMOS V power field effect transistor D2PAK for surface mountMotorolaDPAK4-55°C175°C198 K
MTB52N06VLTMOS V power field effect transistor D2PAK for surface mountMotorolaDPAK4-55°C175°C200 K
MTB55N06ZTMOS E-FET high energy power FET D2PAK for surface mountMotorolaDPAK4-55°C150°C146 K
MTB60N06HDHDTMOS E-FET high energy power FET D2PAK for surface mountMotorolaDPAK4-55°C150°C280 K
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