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Electronic component:Description:Manuf.PackagePinsT°minT°maxDatasheet
MTB30N06VLTMOS V power field effect transistorMotorolaDPAK4-55°C175°C262 K
MTB36N06ETMOS E-FET high energy power FET D2PAK for surface mountMotorolaDPAK4-55°C150°C278 K
MTB36N06VTMOS V power field effect transistorMotorolaDPAK4-55°C175°C241 K
MTB3N100ETMOS E-FET high energy power FET D2PAK for surface mountMotorolaDPAK4-55°C150°C262 K
MTB3N120ETMOS E-FET high energy power FET D2PAK for surface mountMotorolaDPAK4-55°C150°C322 K
MTB3N120ETMOS E-FET high energy power FET D2PAK for surface mountMotorolaDPAK4-55°C150°C322 K
MTB3N60ETMOS E-FET high energy power FET D2PAK for surface mountMotorolaDPAK4-55°C150°C74 K
MTB50N06VTMOS V power field effect transistor D2PAK for surface mountMotorolaDPAK4-55°C175°C289 K
MTB50N06VTMOS V power field effect transistor D2PAK for surface mountMotorolaDPAK4-55°C175°C289 K
MTB50N06VLTMOS V power field effect transistor D2PAK for surface mountMotorolaDPAK4-55°C175°C249 K
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