Electronic component: | Description: | Manuf. | Package | Pins | T°min | T°max | Datasheet |
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MGSF1N03LT3 | Low rDS(on) small-signal MOSFET tmos single N-channel field effect transistor | Motorola | - | 3 | -55°C | 150°C | 125 K |
RF1S42N03LSM | 42A, 30V, 0.025 Ohm, Logic Level, N-Channel Power MOSFET | Intersil-Corporation | - | - | - | - | 112 K |
RF1S42N03LSM | 42A, 30V, 0.025 Ohm, Logic Level, N-Channel Power MOSFET | Intersil-Corporation | - | - | - | - | 112 K |
RF1S45N03L | 45A, 30V, 0.022 ohm, Logic Level, N-Channel Power MOSFET | Intersil-Corporation | - | - | - | - | 100 K |
RFD16N03L | 16A, 30V, 0.022 Ohm, Logic Level, N-Channel Power MOSFETs | Intersil-Corporation | - | - | - | - | 107 K |
RFD16N03LSM | 16A, 30V, 0.022 Ohm, Logic Level, N-Channel Power MOSFETs | Intersil-Corporation | - | - | - | - | 107 K |
RFP42N03L | 42A, 30V, 0.025 Ohm, Logic Level, N-Channel Power MOSFET | Intersil-Corporation | - | - | - | - | 112 K |
RFP45N03L | 45A, 30V, 0.022 ohm, Logic Level, N-Channel Power MOSFET | Intersil-Corporation | - | - | - | - | 100 K |
STB60N03L-10 | N-CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR | SGS-Thomson-Microelectronics | - | - | - | - | 87 K |
STP40N03L-20 | N-CHANNLE ENHANCEMENT MODE ULTRA HIGH DENSITY POWER MOS TRANSISTOR | SGS-Thomson-Microelectronics | - | - | - | - | 65 K |
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