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Electronic component:Description:Manuf.PackagePinsT°minT°maxDatasheet
IRFN044HEXFET power mosfetInternational-Rectifier-2-55°C150°C211 K
MMDF3N04HDR2TMOS dual N-channel field effect transistorMotorola-8-55°C150°C291 K
PACDN042Y3Transient voltage suppressor arrayCalifornia-Micro-Devices-23-20°C85°C117 K
PACDN042Y4Transient voltage suppressor arrayCalifornia-Micro-Devices-4-40°C85°C84 K
PACDN042Y5Transient voltage suppressor arrayCalifornia-Micro-Devices-5-40°C85°C84 K
PACDN043Y4Transient voltage suppressor arrayCalifornia-Micro-Devices-24-20°C85°C117 K
PACDN044Y5Transient voltage suppressor arrayCalifornia-Micro-Devices-23-20°C85°C117 K
PACDN046MTransient voltage suppressor arrayCalifornia-Micro-DevicesMSOP23-20°C85°C117 K
SD600N04PCStandard recovery diodeInternational-Rectifier-2-40°C180°C264 K
SD600N04PSCStandard recovery diodeInternational-Rectifier-2-40°C180°C264 K
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