| Electronic component: | Description: | Manuf. | Package | Pins | T°min | T°max | Datasheet |
|---|
| PHB36N06E | 60 V, power MOS transistor | Philips-Semiconductors | SOT | 3 | - | - | 55 K |
| PHB36N06E | 60 V, power MOS transistor | Philips-Semiconductors | SOT | 3 | - | - | 55 K |
| PHB37N06LT | 55 V, trenchMOS transistor logic level FET | Philips-Semiconductors | SOT | 3 | -55°C | 175°C | 64 K |
| PHB50N06LT | 55 V, TrenchMOS transistor logic level FET | Philips-Semiconductors | SOT | 3 | -55°C | 175°C | 55 K |
| PHD37N06LT | 55 V, trenchMOS transistor logic level FET | Philips-Semiconductors | SOT | 3 | -55°C | 175°C | 64 K |
| PHP15N06E | 60 V, power MOS transistor | Philips-Semiconductors | TO | 3 | - | - | 54 K |
| PHP21N06T | 55 V, trenchMOS transistor standard level FET | Philips-Semiconductors | TO | 3 | -55°C | 175°C | 53 K |
| PHP36N06E | 60 V, power MOS transistor | Philips-Semiconductors | TO | 3 | - | - | 51 K |
| PHP37N06LT | 55 V, trenchMOS transistor logic level FET | Philips-Semiconductors | SOT | 3 | -55°C | 175°C | 64 K |
| PSMN063-150D | 150 V, N-channel enhancement mode field-effect transistor | Philips-Semiconductors | SOT | 3 | -55°C | 175°C | 279 K |
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