| Electronic component: | Description: | Manuf. | Package | Pins | T°min | T°max | Datasheet |
|---|
| FDB035AN06A0 | N-Channel PowerTrench ® MOSFET 60V, 80A, 3.5mOhm | Fairchild-Semiconductor | - | - | - | - | 236 K |
| FDB10AN06A0 | N-Channel PowerTrench ® MOSFET 60V, 75A, 10.5mOhm | Fairchild-Semiconductor | - | - | - | - | 265 K |
| FDD10AN06A0 | N-Channel PowerTrench ® MOSFET 60V, 50A, 10.5mOhm | Fairchild-Semiconductor | - | - | - | - | 236 K |
| FDI038AN06A0 | N-Channel PowerTrench ® MOSFET 60V, 80A, 3.8mOhm | Fairchild-Semiconductor | - | - | - | - | 280 K |
| FDP038AN06A0 | N-Channel PowerTrench ® MOSFET 60V, 80A, 3.8mOhm | Fairchild-Semiconductor | - | - | - | - | 280 K |
| FDP10AN06A0 | N-Channel PowerTrench ® MOSFET 60V, 75A, 10.5mOhm | Fairchild-Semiconductor | - | - | - | - | 265 K |
| PHT8N06LT | TrenchMOS transistor. Logic level FET. | Philips-Semiconductors | SOT223 | 4 | -55°C | 150°C | 64 K |
| RFD4N06LSM | 4A, 60V, 0.600 Ohm, Logic Level, N-Channel Power MOSFETs | Fairchild-Semiconductor | - | - | - | - | 351 K |
| RFP30N06LE | 30A, 60V, ESD Rated, 0.047 Ohm, Logic Level N-Channel Power MOSFETs | Fairchild-Semiconductor | - | - | - | - | 392 K |
| VN06SP13TR | ISO HIGH SIDE SMART POWER SOLID STATE RELAY | SGS-Thomson-Microelectronics | - | - | - | - | 219 K |
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