| Electronic component: | Description: | Manuf. | Package | Pins | T°min | T°max | Datasheet |
|---|
| MLN1030SS | NPN silicon RF power transistor | Advanced-Semiconductor-Inc- | - | 4 | -65°C | 200°C | 17 K |
| MLN1033F | NPN silicon RF power transistor | Advanced-Semiconductor-Inc- | - | 2 | -65°C | 200°C | 17 K |
| MLN1033S | NPN silicon RF power transistor | Advanced-Semiconductor-Inc- | - | 4 | -65°C | 200°C | 18 K |
| MLN1037F | NPN silicon RF power transistor | Advanced-Semiconductor-Inc- | - | 2 | -65°C | 200°C | 18 K |
| MLN1037S | NPN silicon RF power transistor | Advanced-Semiconductor-Inc- | - | 4 | -65°C | 200°C | 18 K |
| MTW45N10E | TMOS E-FET power field effect transistor TO-247 with isolated mounting hole | Motorola | - | 4 | -55°C | 150°C | 155 K |
| MTW6N100E | TMOS E-FET power field effect transistor TO-247 with isolated mounting hole | Motorola | - | 4 | -55°C | 150°C | 195 K |
| MTY100N10E | TMOS E-FET power field effect transistor | Motorola | - | 3 | -55°C | 150°C | 216 K |
| MTY10N100E | TMOS E-FET power field effect transistor | Motorola | - | 3 | -55°C | 150°C | 228 K |
| MTY14N100E | TMOS E-FET power field effect transistor | Motorola | - | 3 | -55°C | 150°C | 232 K |
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