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Electronic component:Description:Manuf.PackagePinsT°minT°maxDatasheet
MTP12N10ETMOS E-FET power field effect transistorMotorola-4-55°C170°C239 K
MTP1N100ETMOS E-FET power field effect transistorMotorola-4-55°C150°C203 K
MTP27N10ETMOS E-FET power field effect transistorMotorola-4-55°C150°C230 K
MTP33N10ETMOS E-FET power field effect transistorMotorola-4-55°C150°C240 K
MTP3N100ETMOS E-FET power field effect transistorMotorola-4-55°C150°C206 K
MTP40N10ETMOS E-FET power field effect transistorMotorola-4-55°C150°C160 K
MTV10N100ETMOS E-FET power field effect transistor D3PAK for surface mountMotorolaDPAK4-55°C150°C269 K
MTV6N100ETMOS E-FET power field effect transistor D3PAK for surface mountMotorolaDPAK4-55°C150°C262 K
MTW10N100ETMOS E-FET power field effect transistor TO-247 with isolated mounting holeMotorola-4-55°C150°C192 K
MTW33N10ETMOS E-FET power field effect transistor TO-247 with isolated mounting holeMotorola-4-55°C150°C227 K
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