| Electronic component: | Description: | Manuf. | Package | Pins | T°min | T°max | Datasheet |
|---|
| MTB1N100E | TMOS E-FET high energy power FET | Motorola | DPAK | 4 | -55°C | 150°C | 256 K |
| MTB33N10E | TMOS E-FET high energy power FET | Motorola | DPAK | 4 | -55°C | 150°C | 266 K |
| MTB3N100E | TMOS E-FET high energy power FET D2PAK for surface mount | Motorola | DPAK | 4 | -55°C | 150°C | 262 K |
| MTB40N10E | TMOS E-FET power field effect transistor | Motorola | DPAK | 4 | -55°C | 150°C | 192 K |
| MTD6N10E | TMOS E-FET power field effect transistor D2PAK for surface mount | Motorola | DPAK | 4 | -55°C | 150°C | 211 K |
| MTD9N10E | TMOS E-FET power field effect transistor D2PAK for surface mount | Motorola | DPAK | 4 | -55°C | 150°C | 257 K |
| MTE215N10E | ISOTOP TMOS E-FET power field effect transistor | Motorola | SOT | 4 | -40°C | 150°C | 226 K |
| MTP10N10E | TMOS IV power field effect transistor | Motorola | - | 4 | -65°C | 150°C | 237 K |
| MTP10N10EL | Logic level TMOS E-FET power field effect transistor | Motorola | - | 4 | -55°C | 150°C | 221 K |
| PRN10320331/151G | Thin film differential terminator resistor network | California-Micro-Devices | SOIC | 20 | -55°C | 150°C | 79 K |
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