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Electronic component:Description:Manuf.PackagePinsT°minT°maxDatasheet
MTB1N100ETMOS E-FET high energy power FETMotorolaDPAK4-55°C150°C256 K
MTB33N10ETMOS E-FET high energy power FETMotorolaDPAK4-55°C150°C266 K
MTB3N100ETMOS E-FET high energy power FET D2PAK for surface mountMotorolaDPAK4-55°C150°C262 K
MTB40N10ETMOS E-FET power field effect transistorMotorolaDPAK4-55°C150°C192 K
MTD6N10ETMOS E-FET power field effect transistor D2PAK for surface mountMotorolaDPAK4-55°C150°C211 K
MTD9N10ETMOS E-FET power field effect transistor D2PAK for surface mountMotorolaDPAK4-55°C150°C257 K
MTE215N10EISOTOP TMOS E-FET power field effect transistorMotorolaSOT4-40°C150°C226 K
MTP10N10ETMOS IV power field effect transistorMotorola-4-65°C150°C237 K
MTP10N10ELLogic level TMOS E-FET power field effect transistorMotorola-4-55°C150°C221 K
PRN10320331/151GThin film differential terminator resistor networkCalifornia-Micro-DevicesSOIC20-55°C150°C79 K
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