| Electronic component: | Description: | Manuf. | Package | Pins | T°min | T°max | Datasheet |
|---|
| IRFB59N10D | HEXFET power MOSFET. VDSS = 100V, RDS(on) = 0.025 Ohm, ID = 58A | International-Rectifier | - | 3 | -55°C | 175°C | 138 K |
| IRFS59N10D | HEXFET power MOSFET. VDSS = 100V, RDS(on) = 0.025 Ohm, ID = 58A | International-Rectifier | DDPak | 3 | -55°C | 175°C | 138 K |
| VN10LP | N-channel enhancement mode vertical DMOS FET | Zetex-Semiconductor | - | 3 | -55°C | 150°C | 22 K |
| VN10LP | N-channel enhancement mode vertical DMOS FET | Zetex-Semiconductor | - | 3 | -55°C | 150°C | 22 K |
| ZXMN10A07FTA | 100 V N-channel enhancement mode mosfet | Zetex-Semiconductor | SOT | 3 | -55°C | 150°C | 971 K |
| ZXMN10A07FTA | 100 V N-channel enhancement mode mosfet | Zetex-Semiconductor | SOT | 3 | -55°C | 150°C | 971 K |
| ZXMN10A07FTC | 100 V N-channel enhancement mode mosfet | Zetex-Semiconductor | SOT | 3 | -55°C | 150°C | 971 K |
| ZXMN10A07FTC | 100 V N-channel enhancement mode mosfet | Zetex-Semiconductor | SOT | 3 | -55°C | 150°C | 971 K |
| ZXMN10A07ZTA | 100 V N-channel enhancement mode mosfet | Zetex-Semiconductor | SOT | 5 | -55°C | 150°C | 951 K |
| ZXMN10A07ZTA | 100 V N-channel enhancement mode mosfet | Zetex-Semiconductor | SOT | 5 | -55°C | 150°C | 951 K |
| ZXMN10A07ZTA | 100 V N-channel enhancement mode mosfet | Zetex-Semiconductor | SOT | 5 | -55°C | 150°C | 951 K |
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