| Electronic component: | Description: | Manuf. | Package | Pins | T°min | T°max | Datasheet |
|---|
| IXFE23N100 | 1000V HiPerFET power MOSFET | distributor | ISOPLUS227 | 4 | -55°C | 150°C | 653 K |
| IXFE34N100 | 1000V HiPerFET power MOSFET | distributor | ISOPLUS227 | 4 | -55°C | 150°C | 653 K |
| IXFE36N100 | 1000V HiPerFET power MOSFET | distributor | ISOPLUS227 | 4 | -55°C | 150°C | 653 K |
| IXFF24N100 | 1000V HiPerFET power MOSFET | distributor | - | 5 | -55°C | 150°C | 72 K |
| IXRH50N100 | 1000V IGBT with reverse blocking capability | distributor | - | 3 | -55°C | 150°C | 43 K |
| IXRH50N100 | 1000V IGBT with reverse blocking capability | distributor | - | 3 | -55°C | 150°C | 43 K |
| STD8N10L | Power dissipation 45 W Transistor polarity N Channel Current Id cont. 8 A Current Idm pulse 32 A Voltage Vgs th max. 2.5 V Voltage Vds max 100 V Resistance Rds on 0.33 R Temperature current 25 ?C | SGS-Thomson-Microelectronics | - | - | - | - | 381 K |
| STD8N10L | Power dissipation 45 W Transistor polarity N Channel Current Id cont. 8 A Current Idm pulse 32 A Voltage Vgs th max. 2.5 V Voltage Vds max 100 V Resistance Rds on 0.33 R Temperature current 25 ?C | SGS-Thomson-Microelectronics | - | - | - | - | 381 K |
| VN10KN3 | 60V N-channel enhancement-mode vertical DMOS FET | distributor | - | 3 | -55°C | 150°C | 454 K |
| VN10LM | N-Channel enhancement-mode MOS transistor | Calogic-LLC | TO | 3 | -55°C | 150°C | 24 K |
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