| Electronic component: | Description: | Manuf. | Package | Pins | T°min | T°max | Datasheet |
|---|
| PHD10N10E | PowerMOS transistor | Philips-Semiconductors | SOT428 | 3 | 0°C | 175°C | 76 K |
| PHN1011 | TrenchMOS transistor. Logic level FET. | Philips-Semiconductors | SOT96 | 8 | -55°C | 150°C | 61 K |
| PHN1013 | TrenchMOS transistor. | Philips-Semiconductors | SOT96 | 8 | -55°C | 150°C | 66 K |
| PHN1015 | TrenchMOS transistor. Logic level FET. | Philips-Semiconductors | SO | 8 | -55°C | 150°C | -- |
| PHN1018 | TrenchMOS transistor. Logic level FET. | Philips-Semiconductors | SOT96 | 8 | -55°C | 150°C | 63 K |
| PHN1018 | TrenchMOS transistor. Logic level FET. | Philips-Semiconductors | SO | 8 | -55°C | 150°C | 63 K |
| PHN103 | N-channel enhancement mode MOS transistor. | Philips-Semiconductors | - | 8 | -65°C | 150°C | 77 K |
| PHN103 | N-channel enhancement mode MOS transistor. | Philips-Semiconductors | - | 8 | -65°C | 150°C | 77 K |
| PHN103 | N-channel enhancement mode MOS transistor. | Philips-Semiconductors | SO | 8 | -65°C | 150°C | 77 K |
| PHP26N10E | PowerMOS transistor. | Philips-Semiconductors | TO220AB | 3 | -55°C | 175°C | 71 K |
| PHP6N10E | PowerMOS transistor. | Philips-Semiconductors | TO220AB | 3 | -55°C | 175°C | 65 K |
| PHP6N10E | PowerMOS transistor. | Philips-Semiconductors | TO220AB | 3 | -55°C | 175°C | 65 K |
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