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Electronic component:Description:Manuf.PackagePinsT°minT°maxDatasheet
HGTG34N100E234A, 1000V N-Channel IGBTIntersil-Corporation----38 K
MTB3N100ETMOS E-FET high energy power FET D2PAK for surface mountMotorolaDPAK4-55°C150°C262 K
MTP1N100ETMOS E-FET power field effect transistorMotorola-4-55°C150°C203 K
MTP3N100ETMOS E-FET power field effect transistorMotorola-4-55°C150°C206 K
MTV10N100ETMOS E-FET power field effect transistor D3PAK for surface mountMotorolaDPAK4-55°C150°C269 K
MTV6N100ETMOS E-FET power field effect transistor D3PAK for surface mountMotorolaDPAK4-55°C150°C262 K
MTW10N100ETMOS E-FET power field effect transistor TO-247 with isolated mounting holeMotorola-4-55°C150°C192 K
MTW6N100ETMOS E-FET power field effect transistor TO-247 with isolated mounting holeMotorola-4-55°C150°C195 K
MTY10N100ETMOS E-FET power field effect transistorMotorola-3-55°C150°C228 K
MTY14N100ETMOS E-FET power field effect transistorMotorola-3-55°C150°C232 K
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