| Electronic component: | Description: | Manuf. | Package | Pins | T°min | T°max | Datasheet |
|---|
| HGTG34N100E2 | 34A, 1000V N-Channel IGBT | Intersil-Corporation | - | - | - | - | 38 K |
| MTB3N100E | TMOS E-FET high energy power FET D2PAK for surface mount | Motorola | DPAK | 4 | -55°C | 150°C | 262 K |
| MTP1N100E | TMOS E-FET power field effect transistor | Motorola | - | 4 | -55°C | 150°C | 203 K |
| MTP3N100E | TMOS E-FET power field effect transistor | Motorola | - | 4 | -55°C | 150°C | 206 K |
| MTV10N100E | TMOS E-FET power field effect transistor D3PAK for surface mount | Motorola | DPAK | 4 | -55°C | 150°C | 269 K |
| MTV6N100E | TMOS E-FET power field effect transistor D3PAK for surface mount | Motorola | DPAK | 4 | -55°C | 150°C | 262 K |
| MTW10N100E | TMOS E-FET power field effect transistor TO-247 with isolated mounting hole | Motorola | - | 4 | -55°C | 150°C | 192 K |
| MTW6N100E | TMOS E-FET power field effect transistor TO-247 with isolated mounting hole | Motorola | - | 4 | -55°C | 150°C | 195 K |
| MTY10N100E | TMOS E-FET power field effect transistor | Motorola | - | 3 | -55°C | 150°C | 228 K |
| MTY14N100E | TMOS E-FET power field effect transistor | Motorola | - | 3 | -55°C | 150°C | 232 K |
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