Electronic component: | Description: | Manuf. | Package | Pins | T°min | T°max | Datasheet |
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RFD7N10LE | 7A, 100V, 0.300 Ohm, N-Channel, Logic Level, Power MOSFETs | Intersil-Corporation | - | - | - | - | 361 K |
RFD7N10LESM | 7A, 100V, 0.300 Ohm, N-Channel, Logic Level, Power MOSFETs | Intersil-Corporation | - | - | - | - | 361 K |
RFG40N10LE | 40A, 100V, 0.040 Ohm, Logic Level N-Channel Power MOSFETs | Intersil-Corporation | - | - | - | - | 413 K |
RFP2N10L | 2A, 80V and 100V, 1.050 Ohm, Logic Level, N-Channel Power MOSFETs | Intersil-Corporation | - | - | - | - | 35 K |
RFP40N10LE | 40A, 100V, 0.040 Ohm, Logic Level N-Channel Power MOSFETs | Intersil-Corporation | - | - | - | - | 413 K |
STD8N10L | Power dissipation 45 W Transistor polarity N Channel Current Id cont. 8 A Current Idm pulse 32 A Voltage Vgs th max. 2.5 V Voltage Vds max 100 V Resistance Rds on 0.33 R Temperature current 25 ?C | SGS-Thomson-Microelectronics | - | - | - | - | 381 K |
STD8N10L | Power dissipation 45 W Transistor polarity N Channel Current Id cont. 8 A Current Idm pulse 32 A Voltage Vgs th max. 2.5 V Voltage Vds max 100 V Resistance Rds on 0.33 R Temperature current 25 ?C | SGS-Thomson-Microelectronics | - | - | - | - | 381 K |
VN10LM | N-Channel enhancement-mode MOS transistor | Calogic-LLC | TO | 3 | -55°C | 150°C | 24 K |
VN10LP | N-channel enhancement mode vertical DMOS FET | Zetex-Semiconductor | - | 3 | -55°C | 150°C | 22 K |
VN10LP | N-channel enhancement mode vertical DMOS FET | Zetex-Semiconductor | - | 3 | -55°C | 150°C | 22 K |
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