| Electronic component: | Description: | Manuf. | Package | Pins | T°min | T°max | Datasheet |
|---|
| DE375-102N12A | RF power MOSFET | distributor | - | 6 | -55°C | 150°C | 82 K |
| IXGH25N120 | 1200V high speed IGBT | distributor | - | 3 | -55°C | 150°C | 45 K |
| IXGH25N120A | 1200V high speed IGBT | distributor | - | 3 | -55°C | 150°C | 45 K |
| IXSH25N120A | 1200V IGBT | distributor | - | 3 | -55°C | 150°C | 32 K |
| IXSH25N120AU1 | 1200V fast recovery epitaxial diode (FRED) | distributor | - | 3 | -55°C | 150°C | 36 K |
| IXSH35N120A | 1200V high voltage, high speed IGBT | distributor | - | 3 | -55°C | 150°C | 64 K |
| IXSH45N120 | 1200V fast recovery epitaxial diode (FRED) | distributor | - | 3 | -55°C | 150°C | 88 K |
| IXSK35N120AU1 | 1200V high voltage IGBT with diode | distributor | - | 3 | -55°C | 150°C | 40 K |
| NV302N12S | 3000 V miniature hybrid multiplier, 10nA output current | distributor | - | - | -55°C | 100°C | 552 K |
| RL1N1200F | Photoflash rectifier. Max recurrent peak reverse voltage 1200V, max RMS voltage 840V, max DC blocking voltage 1200V. Max average forward current 0.5A at Ta=55degC. | distributor | - | 2 | -65°C | 175°C | 23 K |
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