| Electronic component: | Description: | Manuf. | Package | Pins | T°min | T°max | Datasheet |
|---|
| IXGH25N120 | 1200V high speed IGBT | distributor | - | 3 | -55°C | 150°C | 45 K |
| IXGH25N120A | 1200V high speed IGBT | distributor | - | 3 | -55°C | 150°C | 45 K |
| IXSH35N120A | 1200V high voltage, high speed IGBT | distributor | - | 3 | -55°C | 150°C | 64 K |
| IXSH45N120 | 1200V fast recovery epitaxial diode (FRED) | distributor | - | 3 | -55°C | 150°C | 88 K |
| MHPM6B15N120SL | Hybrid power module | Motorola | ISSUE A | 17 | -40°C | 150°C | 265 K |
| MHPM6B25N120SL | Hybrid power module | Motorola | ISSUE A | 17 | -40°C | 150°C | 265 K |
| MTB3N120E | TMOS E-FET high energy power FET D2PAK for surface mount | Motorola | DPAK | 4 | -55°C | 150°C | 322 K |
| MTB3N120E | TMOS E-FET high energy power FET D2PAK for surface mount | Motorola | DPAK | 4 | -55°C | 150°C | 322 K |
| MTP3N120E | TMOS E-FET power field effect transistor | Motorola | - | 4 | -55°C | 150°C | 252 K |
| RL1N1200F | Photoflash rectifier. Max recurrent peak reverse voltage 1200V, max RMS voltage 840V, max DC blocking voltage 1200V. Max average forward current 0.5A at Ta=55degC. | distributor | - | 2 | -65°C | 175°C | 23 K |
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