| Electronic component: | Description: | Manuf. | Package | Pins | T°min | T°max | Datasheet |
|---|
| IRFN150 | HEXFET power mosfet | International-Rectifier | - | 2 | -55°C | 150°C | 217 K |
| MN15G0202 | 4-bit single chip microcomputer with ROM : 2K (x8-bit) , RAM : 128 (x4-bit) | Panasonic---Semiconductor-Company-of-Matsushita-Electronics-Corporation | - | - | - | - | 90 K |
| MN15G0402 | 4-bit single chip microcomputer with ROM : 4K (x8-bit) , RAM : 128 (x4-bit) | Panasonic---Semiconductor-Company-of-Matsushita-Electronics-Corporation | - | - | - | - | 90 K |
| MN15G1601 | 4-bit single chip microcomputer with ROM : 16K (x8-bit) , RAM : 512 (x4-bit) | Panasonic---Semiconductor-Company-of-Matsushita-Electronics-Corporation | - | - | - | - | 115 K |
| MTB29N15E | TMOS E-FET power field effect transistor | Motorola | DPAK | 4 | -55°C | 150°C | 76 K |
| MTP29N15E | TMOS E-FET power field effect transistor | Motorola | - | 4 | -55°C | 150°C | 75 K |
| MTW26N15E | TMOS E-FET power field effect transistor TO-247 with isolated mounting hole | Motorola | - | 4 | -55°C | 150°C | 160 K |
| MTW35N15E | TMOS E-FET power field effect transistor TO-247 with isolated mounting hole | Motorola | - | 4 | -55°C | 150°C | 169 K |
| PRN15320331/151G | Thin film differential terminator resistor network | California-Micro-Devices | DIP | 20 | -55°C | 150°C | 79 K |
| PRN15520331/151G | Thin film differential terminator resistor network | California-Micro-Devices | DIP | 20 | -55°C | 150°C | 79 K |
| [1] [2] 3 [4] [5] [6] [7] [8] [9] [10] |
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