| Electronic component: | Description: | Manuf. | Package | Pins | T°min | T°max | Datasheet |
|---|
| 3N163 | P-channel enchancement mode MOSFET | Linear-Integrated-System-Inc-Linear-Systems | - | 4 | -65°C | 200°C | 14 K |
| 3N164 | P-channel enchancement mode MOSFET | Linear-Integrated-System-Inc-Linear-Systems | - | 4 | -65°C | 200°C | 14 K |
| 3N165 | Dual P-channel enchancement mode MOSFET | Linear-Integrated-System-Inc-Linear-Systems | - | 7 | -65°C | 200°C | 15 K |
| 3N166 | Dual P-channel enchancement mode MOSFET | Linear-Integrated-System-Inc-Linear-Systems | - | 7 | -65°C | 200°C | 15 K |
| AIC1680N16CU | Ultra low power voltage detector | distributor | - | 3 | -30°C | 80°C | 291 K |
| AIC1680N16CV | Ultra low power voltage detector | distributor | - | 8 | -30°C | 80°C | 291 K |
| AIC1680N16CX | Ultra low power voltage detector | distributor | - | 3 | -30°C | 80°C | 291 K |
| AIC1680N16CZ | Ultra low power voltage detector | distributor | - | 3 | -30°C | 80°C | 291 K |
| DE275-501N16A | RF power MOSFET | distributor | - | 6 | -55°C | 150°C | 76 K |
| DE275X2-501N16A | RF power MOSFET | distributor | - | 6 | -55°C | 150°C | 78 K |
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