Electronic component: | Description: | Manuf. | Package | Pins | T°min | T°max | Datasheet |
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2N1711 | NPN silicon planar epitaxial transistor | distributor | - | 3 | -20°C | 70°C | 92 K |
IXBH16N170 | 1700V high voltage, high gain BIMOSFET monolithic bipolar MOS transistor | distributor | - | 3 | -55°C | 150°C | 50 K |
IXBH16N170A | 1700V high voltage, high gain BIMOSFET monolithic bipolar MOS transistor | distributor | - | 3 | -40°C | 150°C | 51 K |
IXBT16N170 | 1700V high voltage, high gain BIMOSFET monolithic bipolar MOS transistor | distributor | - | 3 | -55°C | 150°C | 50 K |
IXBT16N170A | 1700V high voltage, high gain BIMOSFET monolithic bipolar MOS transistor | distributor | - | 3 | -40°C | 150°C | 51 K |
IXFN170N10 | 100V HiPerFET power MOSFET | distributor | - | 4 | -55°C | 150°C | 145 K |
MP02HBN175-10 | 1000V phase control dual SCR, SCR/diode modules | distributor | MP02 | 3 | - | - | 114 K |
MP02HBN175-12 | 1200V phase control dual SCR, SCR/diode modules | distributor | MP02 | 3 | - | - | 114 K |
MP02HBN175-14 | 1400V phase control dual SCR, SCR/diode modules | distributor | MP02 | 3 | - | - | 114 K |
MP02HBN175-16 | 1600V phase control dual SCR, SCR/diode modules | distributor | MP02 | 3 | - | - | 114 K |
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