| Electronic component: | Description: | Manuf. | Package | Pins | T°min | T°max | Datasheet |
|---|
| MTB20N20E | TMOS E-FET high energy power FET | Motorola | DPAK | 4 | -55°C | 150°C | 258 K |
| MTD4N20E | TMOS E-FET power field effect transistor D2PAK for surface mount | Motorola | DPAK | 4 | -55°C | 150°C | 268 K |
| MTD6N20E | TMOS E-FET power field effect transistor D2PAK for surface mount | Motorola | DPAK | 4 | -55°C | 150°C | 269 K |
| MTE125N20E | ISOTOP TMOS E-FET power field effect transistor | Motorola | SOT | 4 | -40°C | 150°C | 228 K |
| MTP20N20E | TMOS E-FET power field effect transistor | Motorola | - | 4 | -55°C | 150°C | 203 K |
| MTP7N20E | TMOS E-FET power field effect transistor | Motorola | - | 4 | -55°C | 150°C | 223 K |
| PRN10016N2001J | Isolated resistor termination network | California-Micro-Devices | SOIC | 16 | -55°C | 125°C | 126 K |
| PRN10116N2001J | Bussed resistor network | California-Micro-Devices | SOIC | 16 | 0°C | 70°C | 51 K |
| PRN10116N2002J | Bussed resistor network | California-Micro-Devices | SOIC | 16 | 0°C | 70°C | 51 K |
| ULN2068B | Quad 1,5A darlington switch | Motorola | PDIP | 16 | 0°C | 70°C | 125 K |
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