| Electronic component: | Description: | Manuf. | Package | Pins | T°min | T°max | Datasheet |
|---|
| IXFH60N20F | 200V HiPerRF power MOSFET | distributor | - | 3 | -55°C | 150°C | 104 K |
| IXFK90N20Q | 200V HiPerFET power MOSFET Q-class | distributor | - | 3 | -40°C | 150°C | 100 K |
| IXFR80N20Q | 200V HiPerFET power MOSFET Q-class | distributor | ISOPLUS247 | 3 | -55°C | 150°C | 35 K |
| IXFT60N20F | 200V HiPerRF power MOSFET | distributor | - | 3 | -55°C | 150°C | 104 K |
| IXFT80N20Q | 200V HiPerFET power MOSFET Q-class | distributor | - | 3 | -55°C | 150°C | 70 K |
| IXFX90N20Q | 200V HiPerFET power MOSFET Q-class | distributor | ISOPLUS247 | 3 | -40°C | 150°C | 100 K |
| IXGN200N60N | 600V HiPerFAST IGBT | distributor | - | 4 | -55°C | 150°C | 67 K |
| TC54VN2001ECBTR | Voltage detector, Nch output, 2.0V, +/-1% | Microchip-Technology-Inc- | - | 3 | -40°C | 85°C | 215 K |
| TC54VN2001EMBTR | Voltage detector, Nch open drain, 2.0V, +/-1% | Microchip-Technology-Inc- | - | 3 | -40°C | 85°C | 215 K |
| VN20N | Power Ptot 100 W Resistance Rds on 0.05 R Voltage Vds typ. 60 V Voltage ESD breakdown 2 kV Temperature current 25 ?C Current output + max. 33 A Voltage Vcc max 26 V Voltage Vcc min 7 V | SGS-Thomson-Microelectronics | Pentawatt | - | - | - | 193 K |
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