| Electronic component: | Description: | Manuf. | Package | Pins | T°min | T°max | Datasheet |
|---|
| BSN20W | N-channel enhancement mode vertical D-MOS transistor. Drain-source voltage 50 V. Drain current(DC) 80 mA. | Philips-Semiconductors | SOT323 | 3 | -65°C | 150°C | -- |
| OPN20-03S2P1 | Input range:3.0-3.6 VDC;output voltage:2.1 VDC; output current:6000 mA;input current:4780 mA; 20 W DC-DC converter | distributor | - | 11 | -40°C | 85°C | 90 K |
| OPN20-03S2P5 | Input range:3.0-3.6 VDC;output voltage:2.5 VDC; output current:6000 mA;input current:5540 mA; 20 W DC-DC converter | distributor | - | 11 | -40°C | 85°C | 90 K |
| PHN205 | Dual N-channel enhancement mode MOS transistor. | Philips-Semiconductors | - | 8 | -65°C | 150°C | 110 K |
| PHN205 | Dual N-channel enhancement mode MOS transistor. | Philips-Semiconductors | SO | 8 | -65°C | 150°C | 110 K |
| PHP3N20L | PowerMOS transistor. Logic level FET. | Philips-Semiconductors | TO220AB | 3 | -55°C | 175°C | 65 K |
| PHP5N20E | PowerMOS transistor. | Philips-Semiconductors | TO220AB | 3 | -55°C | 175°C | 63 K |
| PNP18N20E | PowerMOS transistor. Drain-source voltage 200 V. Drain current(DC) 18 A. | Philips-Semiconductors | TO220AB | 3 | -55°C | 175°C | 66 K |
| PNP18N20E | PowerMOS transistor. Drain-source voltage 200 V. Drain current(DC) 18 A. | Philips-Semiconductors | TO220AB | 3 | -55°C | 175°C | 66 K |
| PNP3N20E | PowerMOS transistor. Drain-source voltage 200 V. Drain current(DC) 3.5 A. | Philips-Semiconductors | TO220AB | 3 | -55°C | 175°C | 64 K |
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