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Electronic component:Description:Manuf.PackagePinsT°minT°maxDatasheet
IRFB38N20DHEXFET power MOSFET. VDSS = 200V, RDS(on) = 0.054 Ohm, ID = 44AInternational-Rectifier-3-55°C175°C133 K
ZXT10N20DE6TA20 V NPN silicon low saturation switching transistorZetex-SemiconductorSOT6-55°C150°C230 K
ZXT10N20DE6TA20 V NPN silicon low saturation switching transistorZetex-SemiconductorSOT6-55°C150°C230 K
ZXT10N20DE6TC20 V NPN silicon low saturation switching transistorZetex-SemiconductorSOT6-55°C150°C230 K
ZXT10N20DE6TC20 V NPN silicon low saturation switching transistorZetex-SemiconductorSOT6-55°C150°C230 K
ZXT12N20DXTADual 20 V NPN silicon low saturation switching transistorZetex-SemiconductorMSOP8-55°C150°C259 K
ZXT12N20DXTADual 20 V NPN silicon low saturation switching transistorZetex-SemiconductorMSOP8-55°C150°C259 K
ZXT12N20DXTADual 20 V NPN silicon low saturation switching transistorZetex-SemiconductorMSOP8-55°C150°C259 K
ZXT12N20DXTCDual 20 V NPN silicon low saturation switching transistorZetex-SemiconductorMSOP8-55°C150°C259 K
ZXT12N20DXTCDual 20 V NPN silicon low saturation switching transistorZetex-SemiconductorMSOP8-55°C150°C259 K
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