Electronic component: | Description: | Manuf. | Package | Pins | T°min | T°max | Datasheet |
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PHD3N20E | 200 V, power MOS transistor | Philips-Semiconductors | SOT | 3 | - | - | 56 K |
PHD3N20E | 200 V, power MOS transistor | Philips-Semiconductors | SOT | 3 | - | - | 56 K |
PHD5N20E | 200 V, power MOS transistor | Philips-Semiconductors | SOT | 3 | -55°C | 175°C | 55 K |
PHP3N20E | 200 V, power MOS transistor | Philips-Semiconductors | TO | 3 | -55°C | 175°C | 52 K |
PHP5N20E | 200 V, power MOS transistor | Philips-Semiconductors | TO | 3 | -55°C | 175°C | 51 K |
PHP8N20E | 200 V, power MOS transistor | Philips-Semiconductors | TO | 3 | - | - | 59 K |
PNP18N20E | PowerMOS transistor. Drain-source voltage 200 V. Drain current(DC) 18 A. | Philips-Semiconductors | TO220AB | 3 | -55°C | 175°C | 66 K |
PNP18N20E | PowerMOS transistor. Drain-source voltage 200 V. Drain current(DC) 18 A. | Philips-Semiconductors | TO220AB | 3 | -55°C | 175°C | 66 K |
R3130N20EA-TR | Low voltage detector with built-in delay circuit. Detector threshold 2.0V. Standard output delay time 240ms. Output type Nch open drain. Taping type TR. | distributor | - | 3 | -40°C | 85°C | 273 K |
R3130N20EC-TR | Low voltage detector with built-in delay circuit. Detector threshold 2.0V. Standard output delay time 240ms. Output type CMOS. Taping type TR. | distributor | - | 3 | -40°C | 85°C | 273 K |
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