| Electronic component: | Description: | Manuf. | Package | Pins | T°min | T°max | Datasheet |
|---|
| TC54VN2101ECB | Voltage detector. Detected voltage 2.1V. Output form: Nch open drain. Tolerance +-1.0%. | TelCom-Semiconductor-Inc- | - | 3 | -40°C | 85°C | 50 K |
| TC54VN2101ECTTR | Voltage detector, Nch open drain, 2.1V, +/-1% | Microchip-Technology-Inc- | - | 5 | -40°C | 85°C | 215 K |
| TC54VN2101EMB | Voltage detector. Detected voltage 2.1V. Output form: Nch open drain. Tolerance +-1.0%. | TelCom-Semiconductor-Inc- | - | 3 | -40°C | 85°C | 50 K |
| TC54VN2101EMBTR | Voltage detector, Nch open drain, 2.1V, +/-1% | Microchip-Technology-Inc- | - | 3 | -40°C | 85°C | 215 K |
| TC54VN2102ECB | Voltage detector. Detected voltage 2.1V. Output form: Nch open drain. Tolerance +-2.0%. | TelCom-Semiconductor-Inc- | - | 3 | -40°C | 85°C | 50 K |
| TC54VN2102EMB | Voltage detector. Detected voltage 2.1V. Output form: Nch open drain. Tolerance +-2.0%. | TelCom-Semiconductor-Inc- | - | 3 | -40°C | 85°C | 50 K |
| TN2106K1 | 60V N-channel enhancement-mode vertical DMOS FET | distributor | - | 3 | -55°C | 150°C | 32 K |
| TN2106N3 | 60V N-channel enhancement-mode vertical DMOS FET | distributor | - | 3 | -55°C | 150°C | 32 K |
| TN2106ND | 60V N-channel enhancement-mode vertical DMOS FET | distributor | Die | 3 | -55°C | 150°C | 32 K |
| VN2106N3 | 60V N-channel enhancement-mode vertical DMOS FET | distributor | - | 3 | -55°C | 150°C | 457 K |
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