| Electronic component: | Description: | Manuf. | Package | Pins | T°min | T°max | Datasheet |
|---|
| 2N2711 | NPN silicon planar epitaxial transistor | distributor | - | 3 | - | - | 57 K |
| 2N2712 | NPN silicon planar epitaxial transistor | distributor | - | 3 | - | - | 57 K |
| 2N2716 | NPN silicon planar epitaxial transistor | distributor | - | 3 | - | - | 57 K |
| EN27LV010120P | 1Megabit low voltage EPROM (128K x 8). Speed 120ns. 3.0V to 3.6V Vcc tolerance. | distributor | PDIP | 32 | 0°C | 70°C | 83 K |
| EN27LV010200P | 1Megabit low voltage EPROM (128K x 8). Speed 200ns. 3.0V to 3.6V Vcc tolerance. | distributor | PDIP | 32 | 0°C | 70°C | 83 K |
| EN27LV01090P | 1Megabit low voltage EPROM (128K x 8). Speed 90ns. 3.0V to 3.6V Vcc tolerance. | distributor | PDIP | 32 | 0°C | 70°C | 83 K |
| IXFN27N80 | 800V HiPerFET power MOSFET | distributor | - | 4 | -55°C | 150°C | 151 K |
| IXFN27N80Q | 800V HiPerFET power MOSFET Q-class | distributor | - | 4 | -55°C | 150°C | 108 K |
| TC54VN2701ECBTR | Voltage detector, Nch output, 2.7V, +/-1% | Microchip-Technology-Inc- | - | 3 | -40°C | 85°C | 215 K |
| TC54VN2701EMBTR | Voltage detector, Nch open drain, 2.7V, +/-1% | Microchip-Technology-Inc- | - | 3 | -40°C | 85°C | 215 K |
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