| Electronic component: | Description: | Manuf. | Package | Pins | T°min | T°max | Datasheet |
|---|
| 2N3019 | 800mW NPN silicon AF medium power transistor | distributor | - | 3 | - | - | 144 K |
| 2N3020 | 800mW NPN silicon AF medium power transistor | distributor | - | 3 | - | - | 144 K |
| 2N3053 | Silicon planar epitaxial transistor | distributor | - | 3 | -65°C | 200°C | 203 K |
| 2N3053 | Silicon planar epitaxial transistor | distributor | - | 3 | -65°C | 200°C | 203 K |
| 2N3057 | Silicon planar epitaxial transistor | distributor | - | 3 | -65°C | 200°C | 203 K |
| 2N3057 | Silicon planar epitaxial transistor | distributor | - | 3 | -65°C | 200°C | 203 K |
| IRFB9N30A | HEXFET power MOSFET. VDSS = 300V, RDS(on) = 0.45 Ohm, ID = 9.3A | International-Rectifier | - | 3 | -55°C | 150°C | 137 K |
| OHN3040U | Hallogic hall effect sensor | distributor | Silicon chip | 3 | -20°C | 85°C | 287 K |
| OHN3075U | Hallogic hall effect sensor | distributor | Silicon chip | 3 | -20°C | 85°C | 299 K |
| PN3053 | 1W PNP complementary silicon transistor | distributor | - | 3 | -65°C | 200°C | 203 K |
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