| Electronic component: | Description: | Manuf. | Package | Pins | T°min | T°max | Datasheet |
|---|
| 2N3055 | NPN silicon power transistor. 15Amp, 60V, 115Watt. These devices are designed for general purpose switching and amplifier applications. | distributor | - | 3 | -65°C | 200°C | 48 K |
| 2N3055 | High power NPN transistor. General-purpose switching and amplifier application. Vceo = 60Vdc, Vcer = 70Vdc, Vcb = 100Vdc, Veb = 15Vdc, Ic = 7Adc, Ib = 7Adc, PD = 115W. | distributor | - | 3 | -65°C | 200°C | 48 K |
| 2N3055H | NPN silicon power transistor. 15Amp, 100V, 115Watt. These devices are designed for general purpose switching and amplifier applications. | distributor | - | 3 | -65°C | 200°C | 48 K |
| MN3008 | 2048-stage low noise BBD | Panasonic---Semiconductor-Company-of-Matsushita-Electronics-Corporation | DIP | 8 | -20°C | 60°C | 168 K |
| TC54VN3001ECB | Voltage detector. Detected voltage 3.0V. Output form: Nch open drain. Tolerance +-1.0%. | TelCom-Semiconductor-Inc- | - | 3 | -40°C | 85°C | 50 K |
| TC54VN3001EMB | Voltage detector. Detected voltage 3.0V. Output form: Nch open drain. Tolerance +-1.0%. | TelCom-Semiconductor-Inc- | - | 3 | -40°C | 85°C | 50 K |
| TC54VN3001EZB | Voltage detector. Detected voltage 3.0V. Output form: Nch open drain. Tolerance +-1.0%. | TelCom-Semiconductor-Inc- | - | 3 | -40°C | 85°C | 50 K |
| TC54VN3002ECB | Voltage detector. Detected voltage 3.0V. Output form: Nch open drain. Tolerance +-2.0%. | TelCom-Semiconductor-Inc- | - | 3 | -40°C | 85°C | 50 K |
| TC54VN3002EMB | Voltage detector. Detected voltage 3.0V. Output form: Nch open drain. Tolerance +-2.0%. | TelCom-Semiconductor-Inc- | - | 3 | -40°C | 85°C | 50 K |
| TC54VN3002EZB | Voltage detector. Detected voltage 3.0V. Output form: Nch open drain . Tolerance +-2.0%. | TelCom-Semiconductor-Inc- | - | 3 | -40°C | 85°C | 50 K |
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