Electronic component: | Description: | Manuf. | Package | Pins | T°min | T°max | Datasheet |
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2N3251A | General purpose PNP transistor | distributor | - | 3 | -65°C | 200°C | 183 K |
IRF5N3205 | HEXFET power MOSFET surface mount. BVDSS = 55V, RDS(on) = 0.008 Ohm, ID = 55A | International-Rectifier | - | 3 | -55°C | 150°C | 118 K |
IXFN32N60 | 600V HiPerFET power MOSFET | distributor | - | 4 | -55°C | 150°C | 192 K |
IXGN32N60B | 600V HiPerFAST IGBT | distributor | - | 3 | -55°C | 150°C | 35 K |
IXGN32N60BU1 | 600V HiPerFAST IGBT with diode | distributor | - | 3 | -55°C | 150°C | 85 K |
TC54VN3201ECBTR | Voltage detector, Nch output, 3.2V, +/-1% | Microchip-Technology-Inc- | - | 3 | -40°C | 85°C | 215 K |
VN3205N3 | 50V N-channel enhancement-mode vertical DMOS FET | distributor | - | 3 | -55°C | 150°C | 459 K |
VN3205N6 | 50V N-channel enhancement-mode vertical DMOS FET | distributor | DIP | 14 | -55°C | 150°C | 459 K |
VN3205N8 | 50V N-channel enhancement-mode vertical DMOS FET | distributor | - | 3 | -55°C | 150°C | 459 K |
VN3205ND | 50V N-channel enhancement-mode vertical DMOS FET | distributor | Die | 3 | -55°C | 150°C | 459 K |
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