| Electronic component: | Description: | Manuf. | Package | Pins | T°min | T°max | Datasheet |
|---|
| 2N3414 | 500mW NPN silicon transistor | distributor | - | 3 | -55°C | 150°C | 48 K |
| 2N3439 | NPN High voltage amplifier | distributor | - | 3 | -65°C | 200°C | 262 K |
| 2N3440 | NPN High voltage amplifier | distributor | - | 3 | -65°C | 200°C | 262 K |
| 2N3441 | 140V NPN silicon power transistor | distributor | TO | 3 | -65°C | 200°C | 100 K |
| 2N3442 | 140V NPN silicon power transistor | distributor | - | 3 | -65°C | 200°C | 141 K |
| 2N3447 | 120V NPN silicon power transistor | distributor | - | 3 | -65°C | 200°C | 141 K |
| 2N3478 | 120V NPN silicon planar transistor | distributor | TO | 3 | -65°C | 200°C | 44 K |
| IRF5N3415 | HEXFET power MOSFET surface mount. BVDSS = 150V, RDS(on) = 0.042 Ohm, ID = 37.5A | International-Rectifier | - | 3 | -55°C | 150°C | 117 K |
| R3131N34EA-TR | Low voltage detector with built-in delay circuit. Detector threshold 3.4V. Standard output delay time 240ms. Output type Nch open drain. Detection mode H series output. Taping type TR. | distributor | - | 3 | -40°C | 85°C | 273 K |
| R3131N34EC-TR | Low voltage detector with built-in delay circuit. Detector threshold 3.4V. Standard output delay time 240ms. Output type CMOS. Detection mode H series output. Taping type TR. | distributor | - | 3 | -40°C | 85°C | 273 K |
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