| Electronic component: | Description: | Manuf. | Package | Pins | T°min | T°max | Datasheet |
|---|
| FDN357N | N-Channel Logic Level Enhancement Mode Field Effect Transistor | Fairchild-Semiconductor | - | 3 | - | - | 84 K |
| FDN358P | P-Channel Logic Level Enhancement Mode Field Effect Transistor | Fairchild-Semiconductor | - | 3 | - | - | 85 K |
| FDN359AN | N-Channel Logic Level PowerTrench® MOSFET | Fairchild-Semiconductor | - | 3 | - | - | 264 K |
| HGT1S20N35G3VL | 350V, 20A Ignition IGBT | Intersil-Corporation | - | - | - | - | 106 K |
| HGT1S20N35G3VLS | 350V, 20A Ignition IGBT | Intersil-Corporation | - | - | - | - | 106 K |
| HGTP20N35G3VL | 350V, 20A Ignition IGBT | Intersil-Corporation | - | - | - | - | 106 K |
| MGB15N35CLT4 | Internally Clamped N-Channel IGBT | ON-Semiconductor | D2PAK | 3 | - | - | 99 K |
| MGP15N35CL | Internally Clamped N-Channel IGBT | ON-Semiconductor | - | 3 | - | - | 99 K |
| MGP20N35CL | SMARTDISCRETES Internally Clamped N-Channel IGBT | ON-Semiconductor | - | 3 | - | - | 120 K |
PN3563
MPS3563 | NPN RF Amplifier | Fairchild-Semiconductor | - | - | - | - | 77 K |
| 1 [2] [3] [4] [5] [6] [7] [8] [9] [10] |
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