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Electronic component:Description:Manuf.PackagePinsT°minT°maxDatasheet
FDN357N N-Channel Logic Level Enhancement Mode Field Effect TransistorFairchild-Semiconductor-3--84 K
FDN358P P-Channel Logic Level Enhancement Mode Field Effect TransistorFairchild-Semiconductor-3--85 K
FDN359AN N-Channel Logic Level PowerTrench® MOSFETFairchild-Semiconductor-3--264 K
HGT1S20N35G3VL350V, 20A Ignition IGBTIntersil-Corporation----106 K
HGT1S20N35G3VLS350V, 20A Ignition IGBTIntersil-Corporation----106 K
HGTP20N35G3VL350V, 20A Ignition IGBTIntersil-Corporation----106 K
MGB15N35CLT4Internally Clamped N-Channel IGBTON-SemiconductorD2PAK3--99 K
MGP15N35CLInternally Clamped N-Channel IGBTON-Semiconductor-3--99 K
MGP20N35CLSMARTDISCRETES Internally Clamped N-Channel IGBTON-Semiconductor-3--120 K
PN3563
MPS3563
NPN RF AmplifierFairchild-Semiconductor----77 K
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