| Electronic component: | Description: | Manuf. | Package | Pins | T°min | T°max | Datasheet |
|---|
| 2N3702 | 360mW silicon general purpose AF transistor | distributor | - | 3 | -55°C | 150°C | 299 K |
| 2N3703 | 360mW silicon general purpose AF transistor | distributor | - | 3 | -55°C | 150°C | 299 K |
| 2N3704 | 360mW silicon general purpose AF transistor | distributor | - | 3 | -55°C | 150°C | 299 K |
| 2N3705 | 360mW silicon general purpose AF transistor | distributor | - | 3 | -55°C | 150°C | 299 K |
| 2N3706 | 360mW silicon general purpose AF transistor | distributor | - | 3 | -55°C | 150°C | 299 K |
| 2N3707 | 360mW NPN silicon general purpose AF transistor | distributor | - | 3 | -55°C | 150°C | 137 K |
| 2N3708 | 360mW NPN silicon general purpose AF transistor | distributor | - | 3 | -55°C | 150°C | 137 K |
| 2N3710 | 360mW NPN silicon general purpose AF transistor | distributor | - | 3 | -55°C | 150°C | 137 K |
| 2N3790 | 80V PNP silicon power transistor | distributor | - | 2 | -65°C | 200°C | 124 K |
| IRF5N3710 | HEXFET power MOSFET surface mount. BVDSS = 100V, RDS(on) = 0.028 Ohm, ID = 45A | International-Rectifier | - | 3 | -55°C | 150°C | 116 K |
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