Electronic component: | Description: | Manuf. | Package | Pins | T°min | T°max | Datasheet |
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2N4029 | 800mW PNP silicon planar epitaxial transistor | distributor | - | 3 | -65°C | 150°C | 39 K |
2N4030 | 800mW PNP silicon AF medium power amplifier | distributor | - | 3 | -65°C | 200°C | 143 K |
2N4032 | 800mW PNP silicon AF medium power amplifier | distributor | - | 3 | -65°C | 200°C | 143 K |
2N4036 | Complementary silicon AF medium power amplifier | distributor | - | 3 | -65°C | 200°C | 147 K |
2N4058 | 360mW PNP silicon general purpose AF transistor | distributor | - | 3 | -55°C | 150°C | 137 K |
2N4059 | 360mW PNP silicon general purpose AF transistor | distributor | - | 3 | -55°C | 150°C | 137 K |
2N4060 | 360mW PNP silicon general purpose AF transistor | distributor | - | 3 | -55°C | 150°C | 137 K |
2N4061 | 360mW PNP silicon general purpose AF transistor | distributor | - | 3 | -55°C | 150°C | 137 K |
2N4062 | 360mW PNP silicon general purpose AF transistor | distributor | - | 3 | -55°C | 150°C | 137 K |
RL1N4007 | Silicon rectifier. Max recurrent peak reverse voltage 1000V, max RMS voltage 700V, max DC blocking voltage 1000V. Max average forward current 1.0A at Ta=55degC. | distributor | - | 2 | -65°C | 175°C | 23 K |
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