| Electronic component: | Description: | Manuf. | Package | Pins | T°min | T°max | Datasheet |
|---|
| 2N4031 | 80 V, PNP medium power transistor | Philips-Semiconductors | TO | 3 | -65°C | 150°C | 52 K |
| 2N4033 | 80 V, PNP medium power transistor | Philips-Semiconductors | TO | 3 | -65°C | 150°C | 52 K |
| 2N4033 | 80 V, PNP medium power transistor | Philips-Semiconductors | TO | 3 | -65°C | 150°C | 52 K |
| PHB10N40E | 400 V, power MOS transistor avalanche energy rated | Philips-Semiconductors | SOT | 3 | -55°C | 150°C | 90 K |
| PHB13N40E | 400 V, power MOS transistor avalanche energy rated | Philips-Semiconductors | SOT | 3 | -55°C | 150°C | 104 K |
| PHP10N40E | 400 V, power MOS transistor avalanche energy rated | Philips-Semiconductors | SOT | 3 | -55°C | 150°C | 90 K |
| PHP13N40E | 400 V, power MOS transistor avalanche energy rated | Philips-Semiconductors | SOT | 3 | -55°C | 150°C | 104 K |
| PHP2N40E | 400 V, power MOS transistor | Philips-Semiconductors | TO | 3 | - | - | 21 K |
| PHP3N40E | 400 V, power MOS transistor avalanche energy rated | Philips-Semiconductors | SOT | 3 | -55°C | 150°C | 76 K |
| PHW10N40E | 400 V, power MOS transistor avalanche energy rated | Philips-Semiconductors | SOT | 3 | -55°C | 150°C | 90 K |
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