Electronic component: | Description: | Manuf. | Package | Pins | T°min | T°max | Datasheet |
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PHB3N40E | 400 V, power MOS transistor avalanche energy rated | Philips-Semiconductors | SOT | 3 | -55°C | 150°C | 76 K |
PHB4N40E | 400 V, power MOS transistor avalanche energy rated | Philips-Semiconductors | SOT | 3 | -55°C | 150°C | 78 K |
PHB4N40E | 400 V, power MOS transistor avalanche energy rated | Philips-Semiconductors | SOT | 3 | -55°C | 150°C | 78 K |
PHD3N40E | 400 V, power MOS transistor avalanche energy rated | Philips-Semiconductors | SOT | 3 | -55°C | 150°C | 76 K |
PHP5N40E | 400 V, power MOS transistor | Philips-Semiconductors | TO | 3 | - | - | 21 K |
PHP7N40E | 400 V, power MOS transistor avalanche energy rated | Philips-Semiconductors | SOT | 3 | -55°C | 150°C | 78 K |
PHP7N40E | 400 V, power MOS transistor avalanche energy rated | Philips-Semiconductors | SOT | 3 | -55°C | 150°C | 78 K |
PHX10N40E | 400 V, power MOS transistor avalanche energy rated | Philips-Semiconductors | SOT | 3 | -55°C | 150°C | 74 K |
PHX1N40E | 400 V, power MOS transistor | Philips-Semiconductors | SOT | 3 | -55°C | 150°C | 24 K |
PHX2N40E | 400 V, power MOS transistor isolated version of PHP4N40E | Philips-Semiconductors | SOT | 3 | - | - | 24 K |
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