Electronic component: | Description: | Manuf. | Package | Pins | T°min | T°max | Datasheet |
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2N4091 | N-channel J-FET, 40V | Microsemi-Corporation | - | 3 | -65°C | 175°C | 50 K |
2N4092 | N-channel J-FET, 40V | Microsemi-Corporation | - | 3 | -65°C | 175°C | 50 K |
2N4093 | N-channel J-FET, 40V | Microsemi-Corporation | - | 3 | -65°C | 175°C | 50 K |
HGT1N40N60A4D | 600V, SMPS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode | Fairchild-Semiconductor | - | - | - | - | 152 K |
PHX3N40E | 400 V, power MOS transistor avalanche energy rated | Philips-Semiconductors | SOT | 3 | -55°C | 150°C | 64 K |
PHX3N40E | 400 V, power MOS transistor avalanche energy rated | Philips-Semiconductors | SOT | 3 | -55°C | 150°C | 64 K |
PHX4N40E | 400 V, power MOS transistor avalanche energy rated | Philips-Semiconductors | SOT | 3 | -55°C | 150°C | 72 K |
PHX5N40E | 400 V, power MOS transistor isolated version of PHP10N40E | Philips-Semiconductors | SOT | 3 | - | - | 24 K |
PHX7N40E | 400 V, power MOS transistor avalanche energy rated | Philips-Semiconductors | SOT | 3 | -55°C | 150°C | 61 K |
VI-N40-XX | InputV:72V; outputV:5V; 300-600W; 60-120A; single, dual and triple output DC-DC converter to applications that might otherwise require a custom supply | distributor | - | - | - | - | 154 K |
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