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Electronic component:Description:Manuf.PackagePinsT°minT°maxDatasheet
2N4091N-channel J-FET, 40VMicrosemi-Corporation-3-65°C175°C50 K
2N4092N-channel J-FET, 40VMicrosemi-Corporation-3-65°C175°C50 K
2N4093N-channel J-FET, 40VMicrosemi-Corporation-3-65°C175°C50 K
HGT1N40N60A4D600V, SMPS Series N-Channel IGBT with Anti-Parallel Hyperfast DiodeFairchild-Semiconductor----152 K
PHX3N40E400 V, power MOS transistor avalanche energy ratedPhilips-SemiconductorsSOT3-55°C150°C64 K
PHX3N40E400 V, power MOS transistor avalanche energy ratedPhilips-SemiconductorsSOT3-55°C150°C64 K
PHX4N40E400 V, power MOS transistor avalanche energy ratedPhilips-SemiconductorsSOT3-55°C150°C72 K
PHX5N40E400 V, power MOS transistor isolated version of PHP10N40EPhilips-SemiconductorsSOT3--24 K
PHX7N40E400 V, power MOS transistor avalanche energy ratedPhilips-SemiconductorsSOT3-55°C150°C61 K
VI-N40-XXInputV:72V; outputV:5V; 300-600W; 60-120A; single, dual and triple output DC-DC converter to applications that might otherwise require a custom supplydistributor----154 K
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