| Electronic component: | Description: | Manuf. | Package | Pins | T°min | T°max | Datasheet |
|---|
| 1N4148 | 1N4148 signal diode. Breakdown voltage BV = 75V(IR = 5.0uA), BV = 100V(IR = 100uA) | distributor | - | 2 | -65°C | 175°C | 11 M |
| 1N4150 | 1N4150 signal diode. Breakdown voltage BV = 50V(IR = 5.0uA). | distributor | - | 2 | -65°C | 200°C | 16 K |
| 1N4151 | Signal diode. Breakdown voltage BV = 75V(IR = 5.0uA). | distributor | - | 2 | -65°C | 175°C | 11 M |
| 2N4117 | N-Channel silicon junction field-effect transistor | distributor | - | 4 | - | - | 91 K |
| 2N4117A | N-Channel silicon junction field-effect transistor | distributor | - | 4 | - | - | 91 K |
| 2N4118 | N-Channel silicon junction field-effect transistor | distributor | - | 4 | - | - | 91 K |
| 2N4118A | N-Channel silicon junction field-effect transistor | distributor | - | 4 | - | - | 91 K |
| 2N4119 | N-Channel silicon junction field-effect transistor | distributor | - | 4 | - | - | 91 K |
| 2N4119A | N-Channel silicon junction field-effect transistor | distributor | - | 4 | - | - | 91 K |
| 2N4123 | 200mW NPN silicon planar epixial transistor | distributor | - | 3 | - | - | 85 K |
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