Electronic component: | Description: | Manuf. | Package | Pins | T°min | T°max | Datasheet |
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2N4400 | General purpose transistor. Collector-emitter voltage: Vceo = 40V. Collector-base voltage: Vcbo = 60V. Collector dissipation: Pc(max) = 625mW. | distributor | - | 3 | 0°C | 150°C | 73 K |
2N4401 | General purpose transistor. Collector-emitter voltage: Vceo = 40V. Collector-base voltage: Vcbo = 60V. Collector dissipation: Pc(max) = 625mW. | distributor | - | 3 | 0°C | 150°C | 73 K |
2N4402 | General purpose transistor. Collector-emitter voltage: Vceo = -40V. Collector-base voltage: Vcbo = -40V. Collector dissipation: Pc(max) = 625mW. | distributor | - | 3 | 0°C | 150°C | 79 K |
2N4403 | General purpose transistor. Collector-emitter voltage: Vceo = -40V. Collector-base voltage: Vcbo = -40V. Collector dissipation: Pc(max) = 625mW. | distributor | - | 3 | 0°C | 150°C | 79 K |
H2N4401 | 600mA NPN epitaxial planar transistor for general purpose switching and amplifier applications | distributor | - | 3 | - | - | 40 K |
H2N4403 | 600mA PNP epitaxial planar transistor for general purpose switching and amplifier applications | distributor | - | 3 | - | - | 40 K |
TC54VN4401EMB | Voltage detector. Detected voltage 4.4V. Output form: Nch open drain. Tolerance +-1.0%. | TelCom-Semiconductor-Inc- | - | 3 | -40°C | 85°C | 50 K |
TC54VN4401EZB | Voltage detector. Detected voltage 4.4V. Output form: Nch open drain. Tolerance +-1.0%. | TelCom-Semiconductor-Inc- | - | 3 | -40°C | 85°C | 50 K |
TC54VN4402EMB | Voltage detector. Detected voltage 4.4V. Output form: Nch open drain. Tolerance +-2.0%. | TelCom-Semiconductor-Inc- | - | 3 | -40°C | 85°C | 50 K |
TC54VN4402EZB | Voltage detector. Detected voltage 4.4V. Output form: Nch open drain . Tolerance +-2.0%. | TelCom-Semiconductor-Inc- | - | 3 | -40°C | 85°C | 50 K |
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