| Electronic component: | Description: | Manuf. | Package | Pins | T°min | T°max | Datasheet |
|---|
| 2N4401 | Small Signal Transistor (NPN) | General-Semiconductor | - | - | - | - | 111 K |
| 2N4401 | 500mW NPN silicon planar epitaxial transistor | distributor | - | 3 | -55°C | 150°C | 182 K |
| 2N4401 | General purpose transistor. Collector-emitter voltage: Vceo = 40V. Collector-base voltage: Vcbo = 60V. Collector dissipation: Pc(max) = 625mW. | distributor | - | 3 | 0°C | 150°C | 73 K |
| H2N4401 | 600mA NPN epitaxial planar transistor for general purpose switching and amplifier applications | distributor | - | 3 | - | - | 40 K |
| TC54VN4401ECB | Voltage detector. Detected voltage 4.4V. Output form: Nch open drain. Tolerance +-1.0%. | TelCom-Semiconductor-Inc- | - | 3 | -40°C | 85°C | 50 K |
| TC54VN4401ECBTR | Voltage detector, Nch output, 4.4V, +/-1% | Microchip-Technology-Inc- | - | 3 | -40°C | 85°C | 215 K |
| TC54VN4401ECTTR | Voltage detector, Nch open drain, 4.4V, +/-1% | Microchip-Technology-Inc- | - | 5 | -40°C | 85°C | 215 K |
| TC54VN4401EMB | Voltage detector. Detected voltage 4.4V. Output form: Nch open drain. Tolerance +-1.0%. | TelCom-Semiconductor-Inc- | - | 3 | -40°C | 85°C | 50 K |
| TC54VN4401EMBTR | Voltage detector, Nch open drain, 4.4V, +/-1% | Microchip-Technology-Inc- | - | 3 | -40°C | 85°C | 215 K |
| TC54VN4401EZB | Voltage detector. Detected voltage 4.4V. Output form: Nch open drain. Tolerance +-1.0%. | TelCom-Semiconductor-Inc- | - | 3 | -40°C | 85°C | 50 K |
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