| Electronic component: | Description: | Manuf. | Package | Pins | T°min | T°max | Datasheet |
|---|
| 2N5020 | P-Channel silicon junction field-effect transistor | distributor | - | 3 | - | - | 89 K |
| 2N5021 | P-Channel silicon junction field-effect transistor | distributor | - | 3 | - | - | 89 K |
| 2N5038 | 90 V, NPN silicon power transistor | distributor | - | 2 | -65°C | 200°C | 95 K |
| 2N5039 | 75 V, NPN silicon power transistor | distributor | - | 2 | -65°C | 200°C | 95 K |
| 2N5060 | 30 V, silicon controlled rectifier | distributor | - | 3 | - | - | 31 K |
| 2N5061 | 60 V, silicon controlled rectifier | distributor | - | 3 | - | - | 31 K |
| 2N5062 | 100 V, silicon controlled rectifier | distributor | - | 3 | - | - | 31 K |
| 2N5063 | 150 V, silicon controlled rectifier | distributor | - | 3 | - | - | 31 K |
| 2N5064 | 200 V, silicon controlled rectifier | distributor | - | 3 | - | - | 31 K |
| IRFB11N50A | HEXFET power MOSFET. VDSS = 500V, RDS(on) = 0.52 Ohm, ID = 11A | International-Rectifier | - | 3 | -55°C | 150°C | 100 K |
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