| Electronic component: | Description: | Manuf. | Package | Pins | T°min | T°max | Datasheet |
|---|
| 2N5086 | 350mW PNP silicon AF low noise small signal transistor | distributor | - | 3 | -55°C | 150°C | 191 K |
| 2N5087 | 350mW PNP silicon AF low noise small signal transistor | distributor | - | 3 | -55°C | 150°C | 191 K |
| 2N5088 | 350mW NPN silicon AF low noise small signal transistor | distributor | - | 3 | -55°C | 150°C | 191 K |
| 2N5089 | 350mW NPN silicon AF low noise small signal transistor | distributor | - | 3 | -55°C | 150°C | 191 K |
| IRFP23N50L | HEXFET power MOSFET. VDSS = 500V, RDS(on) = 0.190 Ohm, ID = 23A, Trr = 170ns. | International-Rectifier | - | 3 | -55°C | 150°C | 104 K |
| IRFP31N50L | HEXFET power MOSFET. VDSS = 500 V, RDS(on) = 0.15 Ohm, ID = 31 A | International-Rectifier | - | 3 | -55°C | 150°C | 95 K |
| IRFP32N50K | HEXFET power MOSFET. VDSS = 500 V, RDS(on) = 0.135 Ohm, ID = 32 A | International-Rectifier | - | 3 | -55°C | 150°C | 94 K |
| IRFPS37N50A | HEXFET power MOSFET. VDSS = 500 V, RDS(on) = 0.13 Ohm, ID = 36 A | International-Rectifier | - | 3 | -55°C | 150°C | 115 K |
| IRFPS40N50L | HEXFET power MOSFET. VDSS = 500 V, RDS(on) = 0.087 Ohm, ID = 46 A | International-Rectifier | - | 3 | -55°C | 150°C | 111 K |
| IRFPS43N50K | HEXFET power MOSFET. VDSS = 500 V, RDS(on) = 0.078 Ohm, ID = 47 A | International-Rectifier | - | 3 | -55°C | 150°C | 99 K |
| << [14] [15] [16] [17] [18] 19 [20] [21] [22] [23] [24] >> |
|---|
