| Electronic component: | Description: | Manuf. | Package | Pins | T°min | T°max | Datasheet |
|---|
| 2N5038 | HIGH CURRENT NPN SILICON TRANSISTOR | SGS-Thomson-Microelectronics | - | - | - | - | 64 K |
| 2N5087 | Amplifier Transistor PNP | ON-Semiconductor | - | 3 | - | - | 300 K |
| 2N5087RLRA | Amplifier Transistor PNP | ON-Semiconductor | - | 3 | - | - | 300 K |
| 2N5089RLRA | Amplifier Transistor NPN | ON-Semiconductor | - | 3 | - | - | 281 K |
| 2N5089RLRE | Amplifier Transistor NPN | ON-Semiconductor | - | 3 | - | - | 281 K |
| HGTH12N50C1 | 10A, 12A, 400V and 500V N-Channel IGBTs | Intersil-Corporation | - | - | - | - | 38 K |
| HGTH12N50E1 | 10A, 12A, 400V and 500V N-Channel IGBTs | Intersil-Corporation | - | - | - | - | 38 K |
| HGTP10N50C1 | 10A, 12A, 400V and 500V N-Channel IGBTs | Intersil-Corporation | - | - | - | - | 38 K |
| HGTP10N50E1HGTH12N40C1 | 10A, 12A, 400V and 500V N-Channel IGBTs | Intersil-Corporation | - | - | - | - | 38 K |
| STD2N50-1 | N-CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTORS | SGS-Thomson-Microelectronics | - | - | - | - | 174 K |
| [1] 2 [3] [4] [5] [6] [7] [8] [9] [10] |
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