| Electronic component: | Description: | Manuf. | Package | Pins | T°min | T°max | Datasheet |
|---|
| PHB6N50E | 500 V, power MOS transistor avalanche energy rated | Philips-Semiconductors | SOT | 3 | -55°C | 150°C | 77 K |
| PHP6N50E | 500 V, power MOS transistor avalanche energy rated | Philips-Semiconductors | SOT | 3 | -55°C | 150°C | 77 K |
| PHP6N50E | 500 V, power MOS transistor avalanche energy rated | Philips-Semiconductors | SOT | 3 | -55°C | 150°C | 77 K |
| PHU2N50E | 500 V, power MOS transistor avalanche energy rated | Philips-Semiconductors | SOT | 3 | -55°C | 150°C | 64 K |
| PHX2N50E | 500 V, power MOS transistor avalanche energy rated | Philips-Semiconductors | SOT | 3 | -55°C | 150°C | 77 K |
| PHX4N50E | 500 V, power MOS transistor isolated version of PHP4N50E | Philips-Semiconductors | SOT | 3 | - | - | 24 K |
| PHX5N50E | 500 V, power MOS transistor isolated version of PHP8N50E | Philips-Semiconductors | SOT | 3 | - | - | 24 K |
| PHX6N50E | 500 V, power MOS transistor avalanche energy rated | Philips-Semiconductors | SOT | 3 | -55°C | 150°C | 73 K |
| PHX8N50E | 500 V, power MOS transistor avalanche energy rated | Philips-Semiconductors | SOT | 3 | -55°C | 150°C | 74 K |
| VI-N50-XX | InputV:150V; outputV:5V; 300-600W; 60-120A; single, dual and triple output DC-DC converter to applications that might otherwise require a custom supply | distributor | - | - | - | - | 154 K |
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