| Electronic component: | Description: | Manuf. | Package | Pins | T°min | T°max | Datasheet |
|---|
| 1N5062 | Controlled avalanche rectifier. Repetitive peak reverse voltage 800 V. | Philips-Semiconductors | SOD57 | 2 | -65°C | 175°C | 72 K |
| 2N5088 | NPN general purpose transistor. | Philips-Semiconductors | SOT54 | 3 | -65°C | 150°C | 58 K |
| PHB11N50E | PowerMOS transistor. Avalancne energy rated. | Philips-Semiconductors | SOT404 | 3 | -55°C | 150°C | 41 K |
| PHB2N50E | PowerMOS transistor. Avalanche energy rated. | Philips-Semiconductors | SOT404 | 3 | -55°C | 150°C | 93 K |
| PHP11N50E | PowerMOS transistor. Avalancne energy rated. | Philips-Semiconductors | SOT78 | 3 | -55°C | 150°C | 41 K |
| PHP11N50E | PowerMOS transistor. Avalancne energy rated. | Philips-Semiconductors | TO220AB | 3 | -55°C | 150°C | 41 K |
| PHW11N50E | PowerMOS transistor. Avalancne energy rated. | Philips-Semiconductors | SOT429 | 3 | -55°C | 150°C | 41 K |
| PHW14N50E | PowerMOS transistor. Avalanche energy rated. | Philips-Semiconductors | TO247 | 3 | -55°C | 150°C | 27 K |
| PHW14N50E | PowerMOS transistor. Avalanche energy rated. | Philips-Semiconductors | SOT429 | 3 | -55°C | 150°C | 27 K |
| PHW20N50E | PowerMOS transistor. Avalanche energy rated. | Philips-Semiconductors | TO247 | 3 | -55°C | 150°C | 27 K |
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