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Electronic component:Description:Manuf.PackagePinsT°minT°maxDatasheet
2N5014900V Vce, 0.5A Ic, 20MHz NPN bipolar transistorSemelab-Plc-TO39---15 K
2N503890V NPN silicon power transistordistributor-2-65°C200°C89 K
2N503975V NPN silicon power transistordistributor-2-65°C200°C89 K
2N506740V Complementary silicon power transistordistributor-2-65°C200°C171 K
2N506860V Complementary silicon power transistordistributor-2-65°C200°C171 K
2N506980V Complementary silicon power transistordistributor-2-65°C200°C171 K
MTB8N50ETMOS E-FET high energy power FET D2PAK for surface mountMotorolaDPAK4-55°C150°C162 K
R1110N501ATLLow noise 150mA L.D.O. regulator. Output voltage 5.0V. "L" active type. Taping specification TLdistributor-5-40°C85°C177 K
R1110N501ATRLow noise 150mA L.D.O. regulator. Output voltage 5.0V. "L" active type. Standard taping specification TR.distributor-5-40°C85°C177 K
R1110N501BTRLow noise 150mA L.D.O. regulator. Output voltage 5.0V. "H" active type. Standard taping specification TR.distributor-5-40°C85°C177 K
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